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1 - 2 of 2 results for: EE311

EE 311: Advanced Integrated Circuits Technology

What are the practical and fundamental limits to the evolution of the technology of modern MOS devices and interconnects? How are modern devices and circuits fabricated and what future changes are likely? Advanced techniques and models of MOS devices and back-end (interconnect and contact) processing. What are future device structures and materials to maintain progress in integrated electronics? MOS front-end and back-end process integration. Prerequisites: EE 216 or equivalent. Recommended: EE 212.
Terms: Spr | Units: 3
Instructors: Saraswat, K. (PI)

EE 320: Nanoelectronics

This course covers the device physics and operation principles of nanoelectric devices, with a focus on devices for energy-efficient computation. Topics covered include devices based on new nanomaterials such as carbon nanotubes, semiconductor nanowires, and 2D layered materials such as graphene; non-FET based devices such as nanoelectromechanical (NEM) relay, single electron transistors (SET) and resonant tunneling diodes (RTD); as well as FET-based devices such as tunnel FET. Devices targeted for both logic and memory applications are covered. Prerequisites: Undergraduate device physics, EE222, EE216, EE316. Recommended courses: EE223, EE228, EE311.
Last offered: Spring 2017
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