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EE 317: Special Topics on Wide Bandgap Materials and Devices

Wide-bandgap (WBG) semiconductors present a pathway to push the limits of efficiency in optoelectronics and electronics enabling significant energy savings, offering new and compact architecture, and more functionality. We will first study the examples set by GaN and SiC in lighting, radiofrequency and power applications, then use it to explore new materials like Ga2O3, AlN and diamond to understand their potential to drive the future semiconductor industry. The term papers will include a short project that may require simulation to conduct device design and analysis. Prerequisites: EE 216 or EE 218
Terms: Spr | Units: 3
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