printer friendly pageEE 213: Digital MOS Integrated Circuits
Looks a little more deeply at how digital circuits operate, what makes a gate digital, and how to "cheat" to improve performance or power. To aid this analysis we create a number of different models for MOS transistors and choose the simplest one that can explain our the circuit's operation, using both hand and computer analysis. We explore static, dynamic, pulse-mode, and current mode logic, and show how they are are used in SRAM design. Topics include sizing for min delay, noise and noise margins, power dissipation. The class uses memory design (SRAM) as a motivating example. DRAM and EEPROM design issues are also covered. Formerly
EE 313. Prerequisites:
EE 101B,
EE 108. Recommended:
EE 271.
Terms: Spr
| Units: 3
Instructors:
Horowitz, M. (PI)
;
Sawaby, M. (TA)
EE 214A: Fundamentals of Analog Integrated Circuit Design (EE 114)
Analysis and simulation of elementary transistor stages, current mirrors, supply- and temperature-independent bias, and reference circuits. Overview of integrated circuit technologies, circuit components, component variations and practical design paradigms. Differential circuits, frequency response, and feedback will also be covered. Performance evaluation using computer-aided design tools. Undergraduates must take
EE 114 for 4 units. Prerequisite: 101B. GER:DB-EngrAppSci
Terms: Aut
| Units: 3-4
EE 214B: Advanced Analog Integrated Circuit Design
Analysis and design of analog integrated circuits in advanced MOS and bipolar technologies. Device operation and compact modeling in support of circuit simulations needed for design. Emphasis on quantitative evaluations of performance using hand calculations and circuit simulations; intuitive approaches to design. Analytical and approximate treatments of noise and distortion; analysis and design of feedback circuits. Design of archetypal analog blocks for networking and communications such as broadband gain stages and transimpedance amplifiers. Prerequisites:
EE114/214A.
Terms: Win
| Units: 3
Instructors:
Murmann, B. (PI)
;
Kesler, V. (TA)
EE 216: Principles and Models of Semiconductor Devices
Carrier generation, transport, recombination, and storage in semiconductors. Physical principles of operation of the p-n junction, heterojunction, metal semiconductor contact, bipolar junction transistor, MOS capacitor, MOS and junction field-effect transistors, and related optoelectronic devices such as CCDs, solar cells, LEDs, and detectors. First-order device models that reflect physical principles and are useful for integrated-circuit analysis and design. Prerequisite: 116 or equivalent.
Terms: Aut, Win, Sum
| Units: 3
Instructors:
Harris, J. (PI)
;
Howe, R. (PI)
;
Nassiri Nazif, K. (PI)
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Instructors:
Harris, J. (PI)
;
Howe, R. (PI)
;
Nassiri Nazif, K. (PI)
;
Pop, E. (PI)
;
Alexopoulos, G. (TA)
;
Kananian, S. (TA)
EE 218: Power Semiconductor Devices and Technology
This course starts by covering the device physics and technology of current silicon power semiconductor devices including power MOSFETs, IGBTs, and Thyristors. Wide bandgap materials, especially GaN and SiC are potential replacements for Si power devices because of their fundamentally better properties. This course explores what is possible in these new materials, and what the remaining challenges are for wide bandgap materials to find widespread market acceptance in power applications. Future clean, renewable energy systems and high efficiency power control systems will critically depend on the higher performance devices possible in these new materials. Prerequisites:
EE 116 or equivalent.
Terms: Win
| Units: 3
EE 222: Applied Quantum Mechanics I (MATSCI 201)
Emphasis is on applications in modern devices and systems. Topics include: Schrödinger's equation, eigenfunctions and eigenvalues, solutions of simple problems including quantum wells and tunneling, quantum harmonic oscillator, coherent states, operator approach to quantum mechanics, Dirac notation, angular momentum, hydrogen atom, calculation techniques including matrix diagonalization, perturbation theory, variational method, and time-dependent perturbation theory with applications to optical absorption, nonlinear optical coefficients, and Fermi's golden rule. Prerequisites:
MATH 52 and 53,
EE 65 or
PHYSICS 65 (or
PHYSICS 43 and 45).
Terms: Aut
| Units: 3
EE 223: Applied Quantum Mechanics II
Continuation of 222, including more advanced topics: quantum mechanics of crystalline materials, methods for one-dimensional problems, spin, systems of identical particles (bosons and fermions), introductory quantum optics (electromagnetic field quantization, coherent states), fermion annihilation and creation operators, interaction of different kinds of particles (spontaneous emission, optical absorption, and stimulated emission). Quantum information and interpretation of quantum mechanics. Other topics in electronics, optoelectronics, optics, and quantum information science. Prerequisite: 222.
Terms: Win
| Units: 3
EE 225: Biochips and Medical Imaging (MATSCI 382, SBIO 225)
The course covers state-of-the-art and emerging bio-sensors, bio-chips, imaging modalities, and nano-therapies which will be studied in the context of human physiology including the nervous system, circulatory system and immune system. Medical diagnostics will be divided into bio-chips (in-vitro diagnostics) and medical and molecular imaging (in-vivo imaging). In-depth discussion on cancer and cardiovascular diseases and the role of diagnostics and nano-therapies.
Terms: Win
| Units: 3
Instructors:
Wang, S. (PI)
;
de la Zerda, A. (PI)
;
Ravi, N. (TA)
;
Smith, G. (TA)
;
Yao, B. (TA)
;
Yuan, E. (TA)
EE 233: Analog Communications Design Laboratory (EE 133)
Design, testing, and applications. Amplitude modulation (AM) using multiplier circuits. Frequency modulation (FM) based on discrete oscillator and integrated modulator circuits such as voltage-controlled oscillators (VCOs). Phased-lock loop (PLL) techniques, characterization of key parameters, and their applications. Practical aspects of circuit implementations. Labs involve building and characterization of AM and FM modulation/demodulation circuits and subsystems. Enrollment limited to 30 undergraduates and coterminal EE students. Prerequisite:
EE101B. Undergraduate students enroll in EE133 and Graduate students enroll in
EE233. Recommended:
EE114/214A.
Terms: Win
| Units: 3-4
EE 235: Analytical Methods in Biotechnology
This course provides fundamental principles underlying important analytical techniques used in modern biotechnology. The course comprises of lectures and hands-on laboratory experiments. Students will learn the core principles for designing, implementing and analyzing central experimental methods including polymerase chain reaction (PCR), electrophoresis, immunoassays, and high-throughput sequencing. The overall goal of the course is to enable engineering students with little or no background in molecular biology to transition into research in the field of biomedicine.
Terms: Spr
| Units: 3
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