Print Settings
 

EE 216: Principles and Models of Semiconductor Devices

Carrier generation, transport, recombination, and storage in semiconductors. Physical principles of operation of the p-n junction, heterojunction, metal semiconductor contact, bipolar junction transistor, MOS capacitor, MOS and junction field-effect transistors, and related optoelectronic devices such as CCDs, solar cells, LEDs, and detectors. First-order device models that reflect physical principles and are useful for integrated-circuit analysis and design. Prerequisite: 116 or equivalent.
Terms: Aut, Win, Sum | Units: 3 | Grading: Letter or Credit/No Credit
© Stanford University | Terms of Use | Copyright Complaints