141 - 150 of 203 results for: EE

Design of advanced analog circuits at the system level, including switching power converters, amplitude-stabilized and frequency-stabilized oscillators, voltage references and regulators, power amplifiers and buffers, sample-and-hold circuits, and application-specific op-amp compensation. Approaches for finding creative design solutions to problems with difficult specifications and hard requirements. Emphasis on feedback circuit techniques, design-oriented thinking, and hands-on experience with modern analog building blocks. Several designs will be built and evaluated, along with associated laboratory projects.

The functionality and performance of ULSI systems are increasingly dependent upon the characteristics of the memory subsystem. This course introduces students to various semiconductor memory devices: SRAM, DRAM and FLASH, that are used in today's memory subsystems. The course will cover various aspects of semiconductor memories, including basic operation principles, device design considerations, device scaling, device fabrication, memory array architecture, and addressing and readout circuits. The course will also introduce students to recent research in near- and in-memory computing using these memory technologies. The next course is this series is EE 309B, which talks about emerging non-volatile memory devices and circuit design.

The functionality and performance of ULSI systems are increasingly dependent upon the characteristics of the memory subsystem. This course starts off where EE 309A leaves, and introduces students to various emerging non-volatile memory devices: metal oxide resistive switching memory (RRAM), nanoconductive bridge memory (CBRAM), phase change memory (PCM), magnetic tunnel junction memory, spin-transfer-torque random access memory (MRAM, STT-RAM), ferroelectric memory (FRAM) and ferroelectric transistor (FeFET). For each of these memories, the course will cover basic operation principles, device design considerations, device scaling, device fabrication, memory array architecture, and addressing and readout circuits. The course will also introduce students to recent in-memory computing research using these memory technologies.

This is a seminar course with invited speakers. Sponsored by Stanford's SystemX Alliance, the talks will cover emerging topics in contemporary hardware/software systems design. Special focus will be given to the key building blocks of sensors, processing elements and wired/wireless communications, as well as their foundations in semiconductor technology, SoC construction, and physical assembly as informed by the SystemX Focus Areas. The seminar will draw upon distinguished engineering speakers from both industry and academia who are involved at all levels of the technology stack and the applications that are now becoming possible. May be repeated for credit.

What are the practical and fundamental limits to the evolution of the technology of modern MOS devices and interconnects? How are modern devices and circuits fabricated and what future changes are likely? Advanced techniques and models of MOS devices and back-end (interconnect and contact) processing. What are future device structures and materials to maintain progress in integrated electronics? MOS front-end and back-end process integration.

Fabrication, simulation, and testing of a submicron CMOS process. Students will be learning practical aspects of IC fabrication through experiments in the cleanroom including silicon wafer cleaning, photolithography, etching, oxidation, diffusion, ion implantation, chemical vapor deposition, physical sputtering, and electrical testing. Students also simulate the CMOS process using process simulator Sentaurus of the structures and electrical parameters that should result from the process flow. Cleanroom work will be performed in the Stanford Nanofabrication Facility (SNF). Preference to students pursuing doctoral research program requiring SNF facilities. Enrollment limited to 12. Please fill out this form to apply: https://forms.gle/FY8YFcnu3Xasugra8

Design of RF integrated circuits for communications systems, primarily in CMOS. Topics: the design of matching networks and low-noise amplifiers at RF, mixers, modulators, and demodulators; review of classical control concepts necessary for oscillator design including PLLs and PLL-based frequency synthesizers. Design of low phase noise oscillators. Design of high-efficiency (e.g., class E, F) RF power amplifiers, coupling networks. Behavior and modeling of passive and active components at RF. Narrowband and broadband amplifiers; noise and distortion measures and mitigation methods. Overview of transceiver architectures.

Analysis and design of circuits and circuit architectures for signal conditioning and data conversion. Fundamental circuit elements such as operational transconductance amplifiers, active filters, sampling circuits, switched capacitor stages and voltage comparators. Sensor interfaces for micro-electromechanical and biomedical applications. Nyquist and oversampling A/D and D/A converters.

In modern VLSI technologies, device electrical characteristics are sensitive to structural details and therefore to fabrication techniques. How are advanced VLSI devices designed and what future changes are likely? What are the implications for device electrical performance caused by fabrication techniques? Physical models for nanometer scale structures, control of electrical characteristics (threshold voltage, short channel effects, ballistic transport) in small structures, and alternative device structures for VLSI.