121 - 130 of 194 results for: EE

In modern VLSI technologies, device electrical characteristics are sensitive to structural details and therefore to fabrication techniques. How are advanced VLSI devices designed and what future changes are likely? What are the implications for device electrical performance caused by fabrication techniques? Physical models for nanometer scale structures, control of electrical characteristics (threshold voltage, short channel effects, ballistic transport) in small structures, and alternative device structures for VLSI. Prerequisites: 212 and 216, or equivalent.

Recent advances in materials science, device physics and structures, and processing technology, to extend VLS1 device scaling towards atomistic and quantum-mechanical physics boundaries. Topics include: mobility-enhancement techniques; nanomaterial structures including tube, wire, beam, and crystal; conducting polymer; 3D FET; gate-wraparound FET; nonvolatile memory phenomena and devices; self-assembly; flash annealing; plasma doping; and nano pattering. Prerequisites: 216, 316.

This course covers the device physics and operation principles of nanoelectric devices, with a focus on devices for energy-efficient computation. Topics covered include devices based on new nanomaterials such as carbon nanotubes, semiconductor nanowires, and 2D layered materials such as graphene; non-FET based devices such as nanoelectromechanical (NEM) relay, single electron transistors (SET) and resonant tunneling diodes (RTD); as well as FET-based devices such as tunnel FET. Devices targeted for both logic and memory applications are covered. Prerequisites: Undergraduate device physics, EE222, EE216, EE316. Recommended courses: EE223, EE228, EE311.

This course examines energy in modern nanoelectronics, from fundamentals to system-level issues. Topics include fundamental aspects like energy transfer through electrons and phonons, ballistic limits of current and heat, meso- to macroscale mobility and thermal conductivity. The course also nexamines applied topics including power dissipation in nanoscale devices (FinFETs, phase-change memory, nanowires, graphene, nanotubes), circuit leakage, thermal breakdown, thermometry, heat sinks, and thermal challenges in densely integrated systems. Recommended: EE 216 or equivalent.

Modern semiconductor devices and integrated circuits are based on unique energy band, carrier transport, and optical properties of semiconductor materials. How to choose these properties for operation of semiconductor devices. Emphasis is on quantum mechanical foundations of the properties of solids, energy bandgap engineering, semi-classical transport theory, semi-conductor statistics, carrier scattering, electro-magneto transport effects, high field ballistic transport, Boltzmann transport equation, quantum mechanical transitions, optical absorption, and radiative and non-radiative recombination that are the foundations of modern transistors and optoelectronic devices. Prerequisites: EE216 or equivalent.

Principles governing the operation of modern semiconductor devices. Assumptions and approximations commonly made in analyzing devices. Emphasis is on the application of semiconductor physics to the development of advanced semiconductor devices such as heterojunctions, HJ-bipolar transistors, HJ-FETs, nanostructures, tunneling, single electron transistor and photonic devices. Use of SENTARUS, a 2-D Poisson solver, for simulation of ultra-small devices. Examples related to state-of-the-art devices and current device research. Prerequisite: 216. Recommended: 316.

Physical concepts and phenomena for surface science techniques probing the electronic and chemical structure of surfaces, interfaces and nanomaterials. Microscopic and atomic models of microstructures; applications including semiconductor device technology, catalysis and energy. Physical processes of UV and X-ray photoemission spectroscopy, Auger electron spectroscopy, surface EXAFS, low energy electron diffraction, electron/photon stimulated ion desorption, scanning tunneling spectroscopy, ion scattering, energy loss spectroscopy and related imaging methods; and experimental aspects of these surface science techniques. Prerequisites: PHYSICS 70 and MATSCI 199/209, or consent of instructor.

Current topics and trends in the use of light in medicine and for advanced microscopy. Course begins with a review of relevant optical principles (basic physics required). Key topics include: light-tissue interactions; sensing and spectroscopy; contrast-enhanced imaging; super-resolution and label-free microscopy; medical applications of light for diagnostics, in-vivo imaging, and therapy; nanophotonics and array technologies. Open to non-majors; programming experience (Matlab and/or C) required.

Dynamic and transient effects in lasers including spiking, Q-switching, mode locking, frequency modulation, frequency and spatial mode competition, linear and nonlinear pulse propagation, pulse shaping. Formerly EE 232. Prerequisite: 236C.