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91 - 100 of 200 results for: EE

EE 293B: Fundamentals of Energy Processes (ENERGY 293B)

For seniors and graduate students. Covers scientific and engineering fundamentals of renewable energy processes involving heat. Thermodynamics, heat engines, solar thermal, geothermal, biomass. Recommended: MATH 41, 43; PHYSICS 41, 43, 45
Terms: Win | Units: 3

EE 300: Master's Thesis and Thesis Research

Independent work under the direction of a department faculty. Written thesis required for final letter grade. The continuing grade 'N' is given in quarters prior to thesis submission. See 390 if a letter grade is not appropriate. Course may be repeated for credit.
Terms: Aut, Win, Spr, Sum | Units: 1-15 | Repeatable for credit
Instructors: Allison, D. (PI) ; Bambos, N. (PI) ; Boneh, D. (PI) ; Bosi, M. (PI) ; Boyd, S. (PI) ; Bravman, J. (PI) ; Bube, R. (PI) ; Byer, R. (PI) ; Cheriton, D. (PI) ; Chidsey, C. (PI) ; Cioffi, J. (PI) ; Cover, T. (PI) ; Cox, D. (PI) ; DaRosa, A. (PI) ; Dally, B. (PI) ; Dasher, R. (PI) ; Dill, D. (PI) ; Dutton, R. (PI) ; El Gamal, A. (PI) ; Emami-Naeini, A. (PI) ; Engler, D. (PI) ; Eshleman, V. (PI) ; Fan, S. (PI) ; Flynn, M. (PI) ; Franklin, G. (PI) ; Fraser-Smith, A. (PI) ; Garcia-Molina, H. (PI) ; Gibbons, F. (PI) ; Gibbons, J. (PI) ; Gill, J. (PI) ; Girod, B. (PI) ; Glover, G. (PI) ; Goldsmith, A. (PI) ; Goodman, J. (PI) ; Gorinevsky, D. (PI) ; Gray, R. (PI) ; Guibas, L. (PI) ; Hanrahan, P. (PI) ; Harris, J. (PI) ; Harris, S. (PI) ; Hennessy, J. (PI) ; Hesselink, L. (PI) ; Horowitz, M. (PI) ; Howe, R. (PI) ; Inan, U. (PI) ; Kahn, J. (PI) ; Kailath, T. (PI) ; Kazovsky, L. (PI) ; Khuri-Yakub, B. (PI) ; Kino, G. (PI) ; Kovacs, G. (PI) ; Kozyrakis, C. (PI) ; Lall, S. (PI) ; Lam, M. (PI) ; Lee, T. (PI) ; Leeson, D. (PI) ; Levis, P. (PI) ; Levoy, M. (PI) ; Linscott, I. (PI) ; Luckham, D. (PI) ; Macovski, A. (PI) ; Manoharan, H. (PI) ; McCluskey, E. (PI) ; McKeown, N. (PI) ; Melen, R. (PI) ; Meng, T. (PI) ; Miller, D. (PI) ; Mitchell, J. (PI) ; Mitra, S. (PI) ; Montanari, A. (PI) ; Murmann, B. (PI) ; Napel, S. (PI) ; Narasimha, M. (PI) ; Ng, A. (PI) ; Nishi, Y. (PI) ; Nishimura, D. (PI) ; Olukotun, O. (PI) ; Osgood, B. (PI) ; Paulraj, A. (PI) ; Pauly, J. (PI) ; Pease, R. (PI) ; Pelc, N. (PI) ; Pianetta, P. (PI) ; Plummer, J. (PI) ; Popelka, G. (PI) ; Powell, J. (PI) ; Prabhakar, B. (PI) ; Pratt, V. (PI) ; Quate, C. (PI) ; Rosenblum, M. (PI) ; Saraswat, K. (PI) ; Shahidi, R. (PI) ; Shen, Z. (PI) ; Shenoy, K. (PI) ; Siegel, M. (PI) ; Smith, J. (PI) ; Solgaard, O. (PI) ; Spielman, D. (PI) ; Stinson, J. (PI) ; Thrun, S. (PI) ; Tobagi, F. (PI) ; Tyler, G. (PI) ; Ullman, J. (PI) ; Van Roy, B. (PI) ; Vuckovic, J. (PI) ; Walt, M. (PI) ; Wandell, B. (PI) ; Wang, S. (PI) ; Weissman, T. (PI) ; Wenstrand, J. (PI) ; White, R. (PI) ; Widom, J. (PI) ; Widrow, B. (PI) ; Wong, H. (PI) ; Wong, S. (PI) ; Wooley, B. (PI) ; Yamamoto, Y. (PI) ; Zebker, H. (PI)

EE 304: Neuromorphics: Brains in Silicon (BIOE 313)

This course introduces neuromorphic system design, starting at the device level, going through the circuit level, and ending up at the system level. At the device level, it covers MOS transistor operation in the subthreshold region. At the circuit level, it covers silicon neuron and synapse design. And at the system level, it covers to reroutable interconnection. At the end of the course, you will understand how various neuromorphic architectures¿ area and energy use scale with network size. Prerequisites: EE114 & EE108A.
Terms: Spr | Units: 3
Instructors: Boahen, K. (PI)

EE 311: Advanced Integrated Circuits Technology

What are the practical and fundamental limits to the evolution of the technology of modern MOS devices and interconnects? How are modern devices and circuits fabricated and what future changes are likely? Advanced techniques and models of MOS devices and back-end (interconnect and contact) processing. What are future device structures and materials to maintain progress in integrated electronics? MOS front-end and back-end process integration. Prerequisites: EE212, EE216 or equivalent.
Terms: Spr | Units: 3
Instructors: Saraswat, K. (PI)

EE 314A: RF Integrated Circuit Design

Design of RF integrated circuits for communications systems, primarily in CMOS. Topics: the design of matching networks and low-noise amplifiers at RF, mixers, modulators, and demodulators; review of classical control concepts necessary for oscillator design including PLLs and PLL-based frequency synthesizers. Design of low phase noise oscillators. Design of high-efficiency (e.g., class E, F) RF power amplifiers, coupling networks. Behavior and modeling of passive and active components at RF. Narrowband and broadband amplifiers; noise and distortion measures and mitigation methods. Overview of transceiver architectures. Prerequisite: EE214B.
Terms: Spr | Units: 3
Instructors: Lee, T. (PI)

EE 314B: Advanced RF Integrated Circuit Design

Analysis and design of modern communication circuits and systems with emphasize on design techniques for high-frequency (into mm-wave) ICs. Topics include MOS, bipolar, and BiCMOS high-frequency integrated circuits, including power amplifiers, extremely wideband amplifiers, advanced oscillators, phase-locked loops and frequency-translation circuits. Design techniques for mm-wave silicon ICs (on-chip low-loss transmissions lines, unilateralization techniques, in-tegrated antennas, harmonic generation, etc) will also be studied. Prerequisite: EE314A or equivalent course in RF or microwave.
Terms: Spr | Units: 3
Instructors: Arbabian, A. (PI)

EE 315A: VLSI Signal Conditioning Circuits

Design and analysis of integrated circuits for active filters, precision gain stages, and sensor interfaces in CMOS VLSI technology. Operational transconductance amplifiers; sampled-data and continuous-time analog filters. Analysis of noise and amplifier imperfections; compensation techniques such as correlated double sampling. Sensor interfaces for micro-electromechanical and biomedical applications. Layout techniques for analog integrated circuits. Prerequisites: EE214B.
Terms: Aut | Units: 3
Instructors: Murmann, B. (PI)

EE 316: Advanced VLSI Devices

In modern VLSI technologies, device electrical characteristics are sensitive to structural details and therefore to fabrication techniques. How are advanced VLSI devices designed and what future changes are likely? What are the implications for device electrical performance caused by fabrication techniques? Physical models for nanometer scale structures, control of electrical characteristics (threshold voltage, short channel effects, ballistic transport) in small structures, and alternative device structures for VLSI. Prerequisites: 212 and 216, or equivalent.
Terms: Win | Units: 3
Instructors: Wong, H. (PI)

EE 323: Energy in Electronics

This course examines energy in modern nanoelectronics, from fundamentals to system-level issues. Topics include fundamental aspects like energy transfer through electrons and phonons, ballistic limits of current and heat, meso- to macroscale mobility and thermal conductivity. The course also nexamines applied topics including power dissipation in nanoscale devices (FinFETs, phase-change memory, nanowires, graphene, nanotubes), circuit leakage, thermal breakdown, thermometry, heat sinks, and thermal challenges in densely integrated systems.
Terms: Aut | Units: 3
Instructors: Pop, E. (PI)
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